论文信息 - The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire - 字舞流文

The role of the low temperature buffer layer and layer thickness in the optimization of OMVPE growth of GaN on sapphire

S. Hersee | M. Goorsky | J. Ramer | K. Zheng | M. Banas | C. Kranenberg | K. Malloy

[1] M. Graef,et al. Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy , 1995 .

[2] T. Kistenmacher,et al. THE EFFECT OF THERMAL ANNEALING ON GAN NUCLEATION LAYERS DEPOSITED ON (0001) SAPPHIRE BY METALORGANIC CHEMICAL VAPOR DEPOSITION , 1994 .

[3] Hoi Sing Kwok,et al. Low Resistivity Indium Tin Oxide Films by Pulsed Laser Deposition , 1993 .

[4] H. Amano,et al. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE , 1991 .

[5] Shuji Nakamura,et al. GaN Growth Using GaN Buffer Layer , 1991 .