Photoluminescence study of the defect-induced recombination in Cu(In,Ga)Se2 solar cell

Abstract In this paper, a series of recombination paths in Al:ZnO/ZnO/CdS/Cu(In,Ga)Se2 (CIGS) solar cell has been carried out through photoluminescence (PL) emission, optoelectronic conversion characteristic and AFORS HET simulation. Proper rapid thermal annealing (RTA) lead to the improvement of CIGS performance by reducing bulk recombination of CIGS layer and interface recombination, which opens the way to explore a useful method to significantly ameliorate the microstructure within the CIGS layer. A maximum value for the conversion efficiency was obtained when the annealing temperature was continuously increased to 400 °C, where the efficiency increased by 43%, and the recombination from the interface states, the bulk defect traps and the tunneling enhancement recombination was reduced to the lowest. The opto-electronic parameters, such as short-circuit current Jsc, open-circuit voltage Voc, reverse saturation current J0 and the series resistance Rs have been correlatively investigated to the nonradiative transition among the various defects and are strongly dependent upon the annealing temperature as well.

[1]  W. Fan,et al.  Rapid thermal annealing of GaNxAs1-x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence , 2002 .

[2]  H. Morkoç,et al.  A COMPREHENSIVE REVIEW OF ZNO MATERIALS AND DEVICES , 2005 .

[3]  D. Hariskos,et al.  New world record efficiency for Cu(In,Ga)Se2 thin‐film solar cells beyond 20% , 2011 .

[4]  S. Kijima,et al.  Achievement of 17.5% efficiency with 30 × 30cm2-sized Cu(In,Ga)(Se,S)2 submodules , 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

[5]  A. Karotki,et al.  Excitation power and temperature dependence of excitons in CuInSe2 , 2012 .

[6]  K. Müller.  Stress and microstructure of sputter‐deposited thin films: Molecular dynamics investigations , 1987 .

[7]  Uwe Rau,et al.  Electronic properties of CuGaSe2-based heterojunction solar cells. Part I. Transport analysis , 2000 .

[8]  J. Guillemoles.  Stability of Cu(In,Ga)Se 2 solar cells: a thermodynamic approach , 2000 .

[9]  Jean-François Guillemoles,et al.  Stability Issues of Cu(In,Ga)Se2-Based Solar Cells , 2000 .

[10]  O. Zelaya-Ángel,et al.  Characterization of defect levels in chemically deposited CdS films in the cubic-to-hexagonal phase transition , 1997 .

[11]  An analysis of the effect of illumination to the reverse and forward bias current transport mechanisms in an efficient n-ZnO/n-CdS/p-Cu(In,Ga)Se2 solar cell , 2013 .

[12]  S. Yoon,et al.  Investigation of rapid thermal annealing on Cu(In,Ga)Se2 films and solar cells , 2006 .

[13]  Su-Huai Wei,et al.  Effects of Ga addition to CuInSe2 on its electronic, structural, and defect properties , 1998 .

[14]  S. Chua,et al.  Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots , 1998 .

[15]  J. Werner,et al.  Light absorption and emission in semiconductors with band gap fluctuations—A study on Cu(In,Ga)Se2 thin films , 2007 .

[16]  Uwe Rau,et al.  Electronic properties of Cu(In,Ga)Se2 heterojunction solar cells–recent achievements, current understanding, and future challenges , 1999 .

[17]  J. Krustok,et al.  Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals , 1999 .

[18]  K. Durose,et al.  Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition , 2009 .

[19]  L. Kronik,et al.  Interface redox engineering of Cu(In,Ga)Se2 – based solar cells: oxygen, sodium, and chemical bath effects ☆ , 2000 .

[20]  Hao Wang,et al.  Cu2ZnSnSe4 thin film solar cells prepared by rapid thermal annealing of co-electroplated Cu–Zn–Sn precursors , 2013 .

[21]  O. Zelaya-Ángel,et al.  Photoluminescence measurements in the phase transition region for CdS thin films , 1996 .

[22]  T. Nakada,et al.  Photoluminescence and time-resolved photoluminescence in Cu(In,Ga)Se2 thin films and solar cells , 2009 .

[23]  Y. S. Liu,et al.  Improvement of Ga distribution and enhancement of grain growth of CuInGaSe2 by incorporating a thin CuGa layer on the single CuInGa precursor , 2012 .

[24]  A. Slaoui,et al.  Structural and photoluminescence properties of ZnO thin films prepared by sol-gel process , 2008 .

[25]  Jianwei Shi,et al.  Effect of rapid thermal annealing on the compositional ratio and interface of Cu(In,Ga)Se2 solar cells by XPS , 2013 .

[26]  A. Abdel-Aal.  The optical parameters and photoconductivity of CdxIn1Se9−x chalcogenide thin films , 2007 .

[27]  Steven S. Hegedus,et al.  Thin‐film solar cells: device measurements and analysis , 2004 .

[28]  H. Zogg,et al.  Light soaking effects in Cu(In,Ga)Se2 superstrate solar cells , 2003 .

[29]  V. Prasad,et al.  Stress and microstructure of sputter‐deposited thin films: Molecular dynamics simulations and experiment , 1993 .

[30]  R. Stangl,et al.  General Principles of Solar Cell Simulation and Introduction to AFORS-HET , 2012 .

[31]  B. Bartholomeusz,et al.  Performance improvement of CdS/Cu(In,Ga)Se2 solar cells after rapid thermal annealing , 2013 .

[32]  S. Karazhanov.  Impurity photovoltaic effect in indium-doped silicon solar cells , 2001 .

[33]  D. Raabe,et al.  Exploring the p-n junction region in Cu(In,Ga)Se2 thin-film solar cells at the nanometer-scale , 2012 .

[34]  A. Zunger,et al.  Defect physics of the CuInSe 2 chalcopyrite semiconductor , 1998 .