High-resolution line and space pattern fabrication by electron beam lithography using NEB-22 resist

Electron beam lithography (EBL) is one of the useful techniques for fabricating nanostructure. Hydrogen silsesquioxane and calixarene are known as effective EB resists for preparing a fine negative-tone pattern by EBL. However, they have exceedingly low sensitivity. NEB-22 is a chemically amplified EB resist having high sensitivity and high contrast. We demonstrated EBL using a diluted NEB-22 to fabricate a high-resolution line-and-space pattern. As a result, 40-nm-line and 60-nm-space pattern was successfully fabricated.

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