论文信息 - A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models

A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models

The authors propose a robust curve tracing scheme for the simulation of the complete Ic(Vce)|Is=0 breakdown characteristic of a bipolar transistor including snapback effects. Compared to classical curve tracing schemes, this new algorithm does not require the complete Jacobian matrix and/or external resistors of arbitrary size at the device contacts. Therefore it allows the application of nonlocal impact ionization models for the evaluation of bipolar breakdown characteristics.

B. Neinhus | B. Meinerzhagen | S. Decker | M. Bartels

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