论文信息 - A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET's

A new AC technique for accurate determination of channel charge and mobility in very thin gate MOSFET's

A new method is described for determining the channel charge and mobility of a MOS transistor as a function of gate bias from the ac admittance measurements. The admittance of the conduction channel of the MOSFET is derived from a transmission line model. The peaks of theG/\omegaversus ω curves are used to deduce gate-channel capacitance and mobility. The mobile carrier density and mobility in very thin-oxide MOSFET's can be measured more accurately using this ac method, since a zero lateral field and a uniform mobile charge distribution along the channel is maintained with zero drain-source voltage and interface trap effects are reduced by using high test frequencies. Measured data on the electron mobility versus gate voltage are presented for 90-A gate dielectric MOS transistors.

P. Chow | Kang-Lung Wang | P.-M.D. Chow

[1] J. Koomen,et al. Investigation of the MOST channel conductance in weak inversion , 1973 .

[2] F. Berz,et al. Carrier mobility in silicon MOST's , 1969 .

[3] J. Plummer,et al. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .

[4] E. H. Nicollian,et al. The si-sio, interface – electrical properties as determined by the metal-insulator-silicon conductance technique , 1967 .

[5] C. G. Sodini,et al. Charge accumulation and mobility in thin dielectric MOS transistors , 1982 .

[6] G. Baccarani,et al. Transconductance degradation in thin-Oxide MOSFET's , 1983, IEEE Transactions on Electron Devices.

[7] G. Declerck,et al. Inadequacy of the classical theory of the MOS transistor operating in weak inversion , 1973 .

[8] K. Steinhubl. Design of Ion-Implanted MOSFET'S with Very Small Physical Dimensions , 1974 .

[9] M. Kuhn,et al. A quasi-static technique for MOS C-V and surface state measurements , 1970 .

[10] J. T. Clemens,et al. Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.