Energy driven modeling of OFF-state and sub-threshold degradation in scaled NMOS transistors

We study OFF-state and sub-threshold degradation in scaled NMOS transistors and propose a unified channel current (IS) and drain-to-source voltage (VDS) dependent lifetime model for a wide range of bias conditions. The lifetime dependence on VDS suggests that degradation is limited by the maximum energy available for the channel electron in short channel transistors.

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