Influence of the epitaxial layer on the current-voltage characteristics in high voltage VDMOS devices. Analysis of the quasi-saturation point

Abstract In this paper, the influence of the epitaxial layer on the current-voltage characteristics, l D ( V D ), for high voltage VDMOS (vertical double-diffused MOS transistor devices) is analyzed. The quasi-saturation point of the l D ( V D ) curve and its evolution with the drain bias are studied. The epitaxial layer resistance is considered in the saturation and quasi-saturation operation modes.