Unselected Bit-line Potential Boosting Effect in Stacked Vertical Channel NOR Flash Memory

Electrical potential boosting effect of the unselected bit-line is studied in the stacked vertical channel (SVC) NOR flash memory. The unselected bit-line potential needs to be boosted to prevent the unwanted programming. Bit-line bias conditions are addressed for the program operation. Possible 2n-bit structure of the stacked vertical channel flash memory is also discussed.