Advances in the growth and characterization of Ge quantum dots and islands

[1]  N. Mestres,et al.  Theoretical and experimental investigations of single- and multilayer structures with SiGe nanoislands , 2003 .

[2]  Shape and composition change of Ge dots due to Si capping , 2004 .

[3]  G. Bauer,et al.  Structural properties of self-organized semiconductor nanostructures , 2004 .

[4]  Oliver G. Schmidt,et al.  Universal shapes of self-organized semiconductor quantum dots , 2004 .

[5]  Corrado Spinella,et al.  Intermixing-promoted scaling of Ge/Si(100) island sizes , 2002 .

[6]  David J. Smith,et al.  Nanometer-scale composition measurements of Ge/Si(100) islands , 2003 .

[7]  X. Liao,et al.  Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images , 2001 .

[8]  R Stanley Williams,et al.  3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100). , 2003, Physical review letters.

[9]  L. Lai,et al.  Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition , 2004 .

[10]  Lili Vescan,et al.  Organization of self-assembled quantum dots in SiGe/Si multilayers: effect of strain and substrate curvature , 2002 .

[11]  Ya-Hong Xie,et al.  Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si , 1999 .

[12]  Savage,et al.  Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). , 1990, Physical review letters.

[13]  Giovanni Capellini,et al.  Influence of the growth parameters on self-assembled Ge islands on Si(100) , 2002 .

[14]  Oliver G. Schmidt,et al.  Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy , 2000 .

[15]  Stephen R. Leone,et al.  Two-dimensional periodic alignment of self-assembled Ge islands on patterned Si(001) surfaces , 2002 .

[16]  D. Houghton,et al.  Luminescence origins in molecular beam epitaxial Si1−xGex , 1992 .

[17]  D. J. Robbins,et al.  Near‐band‐gap photoluminescence from pseudomorphic Si1−xGex single layers on silicon , 1992 .

[18]  D. J. Lockwood,et al.  Optical properties of Stranski–Krastanov grown three-dimensional Si/Si1−xGex nanostructures , 2005 .

[19]  Giovanni Isella,et al.  Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data , 2004 .

[20]  David J. Lockwood,et al.  Low-temperature Si growth on Si (001): Impurity incorporation and limiting thickness for epitaxy , 2004 .

[21]  W. C. Johnson,et al.  Numerical simulations of pattern-directed phase decomposition in a stressed, binary thin film , 2003 .

[22]  Gunther Springholz,et al.  Three-dimensional stacking of self-assembled quantum dots in multilayer structures , 2005 .

[23]  Oliver G. Schmidt,et al.  Carbon-induced germanium dots: Kinetically-limited islanding process prevents coherent vertical alignment , 1998 .

[24]  Yuhai Tu,et al.  Origin of apparent critical thickness for island formation in heteroepitaxy. , 2004, Physical review letters.

[25]  M. Cazayous,et al.  Strain and composition in self-assembled SiGe islands by Raman spectroscopy , 2002 .

[26]  T. Schwarz-Selinger,et al.  Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001) , 2002 .

[27]  V. Yam,et al.  Selective growth of Ge quantum dots on chemically prepared SiO2/Si(001) surfaces , 2003 .

[28]  Huajian Gao,et al.  Some general properties of stress-driven surface evolution in a heteroepitaxial thin film structure , 1994 .

[29]  R. Stanley Williams,et al.  Lithographic positioning of self-assembled Ge islands on Si(001) , 1997 .

[30]  D. Hits,et al.  STRAIN MODIFICATION IN THIN SI1-X-YGEXCY ALLOYS ON (100) SI FOR FORMATION OF HIGH DENSITY AND UNIFORMLY SIZED QUANTUM DOTS , 1999 .

[31]  B. Holländer,et al.  Influence of molecular hydrogen on Ge island nucleation on Si(001) , 2000 .

[32]  Cho,et al.  Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001) , 2000, Physical review letters.

[33]  Ullrich Pietsch,et al.  High-Resolution X-Ray Scattering from Thin Films and Multilayers , 1998 .

[34]  Williams,et al.  Strain evolution in coherent Ge/Si islands , 2000, Physical review letters.

[35]  T. Metzger,et al.  Determination of strain fields and composition of self-organized quantum dots using x-ray diffraction , 2001 .

[36]  F. Boscherini.  X-ray absorption studies of atomic environments in semiconductor nanostructures , 2003 .

[37]  R. Williams,et al.  Equilibrium model of bimodal distributions of epitaxial island growth. , 2003, Physical review letters.

[38]  Mayank T. Bulsara,et al.  Relaxed template for fabricating regularly distributed quantum dot arrays , 1997 .

[39]  L. Freund,et al.  SiGe Coherent Islanding and Stress Relaxation in the High Mobility Regime , 1997 .

[40]  K. Ensslin,et al.  Size control of carbon-induced Ge quantum dots , 2000 .

[41]  D. C. Houghton,et al.  Molecular Beam Epitaxy Growth of Ge on (100) Si , 1989 .

[42]  Isabelle Berbezier,et al.  Sb-surfactant mediated growth of Ge nanostructures , 2002 .

[43]  Yiming Zeng,et al.  Changing the size and shape of Ge island by chemical etching , 2001 .

[44]  A. Bower,et al.  Three-dimensional analysis of shape transitions in strained-heteroepitaxial islands , 2001 .

[45]  Bauer,et al.  Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots , 2000, Physical review letters.

[46]  Chen,et al.  Structural Transition in Large-Lattice-Mismatch Heteroepitaxy. , 1996, Physical review letters.

[47]  D. Dutartre,et al.  Excitonic photoluminescence from Si-capped strained Si1-xGex layers. , 1991, Physical review. B, Condensed matter.

[48]  O. Schmidt,et al.  Intermixing in Ge hut cluster islands , 2004 .

[49]  M. Hopkinson,et al.  Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs. , 2001, Physical review letters.

[50]  Thomas Fromherz,et al.  Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si (001) substrates , 2003 .

[51]  Theodore I. Kamins,et al.  Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures , 1997 .

[52]  N. Motta,et al.  Ge–Si intermixing in Ge quantum dots on Si , 2000 .

[53]  M. Kummer,et al.  Reversible shape evolution of Ge islands on Si(001). , 2001, Physical review letters.

[54]  Feng Liu,et al.  Towards quantitative understanding of formation and stability of Ge hut islands on Si(001). , 2005, Physical review letters.

[55]  V. Markov,et al.  Optical phonon spectrum of germanium quantum dots , 1999 .

[56]  D. N. Lobanov,et al.  Photoluminescence of Ge(Si)/Si(001) self-assembled islands in the near infra-red wavelength range , 2003 .

[57]  Leonard C. Feldman,et al.  Electronic thin film science : for electrical engineers and materials scientists , 1996 .

[58]  A. Barabasi,et al.  SHAPE TRANSITION IN GROWTH OF STRAINED ISLANDS , 1999 .

[59]  M. Buchanan,et al.  Electroluminescence and photoluminescence from Si1−xGex alloys , 1991 .

[60]  J. Tersoff,et al.  Existence of shallow facets at the base of strained epitaxial islands , 2002 .

[61]  S. W. Lee,et al.  Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer , 2004 .

[62]  O. Schmidt,et al.  Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands , 2000 .

[63]  Oliver G. Schmidt,et al.  Formation of carbon-induced germanium dots , 1997 .

[64]  Chun Lu,et al.  Coarsening kinetics of heteroepitaxial islands in nucleationless Stranski-Krastanov growth , 2003 .

[65]  V. Yam,et al.  Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots , 2004 .

[66]  R. Stanley Williams,et al.  Annealing of phosphorus-doped Ge islands on Si(001) , 2004 .

[67]  Erich Kasper,et al.  Properties of strained and relaxed silicon germanium , 1995 .

[68]  Flemming Jensen,et al.  Dislocation patterning — a new tool for spatial manipulation of Ge islands , 1997 .

[69]  Simpson,et al.  Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon. , 1991, Physical review. B, Condensed matter.

[70]  Haim Grebel,et al.  Polarized Raman scattering and localized embedded strain in self-organized Si/Ge nanostructures , 2003 .

[71]  Jin Zou,et al.  Annealing effects on the microstructure of Ge/Si(001) quantum dots , 2001 .

[72]  M. Tsai,et al.  Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si , 2003 .

[73]  Alonso,et al.  High-resolution Raman spectroscopy of Ge-rich c-Ge1-xSix alloys: Features of the Ge-Ge vibrational modes. , 1991, Physical review. B, Condensed matter.

[74]  V. A. Kurbatov,et al.  Photoluminescence of self-assembled Ge islands grown on Si by MBE at low temperatures , 2003 .

[75]  Y. Shiraki,et al.  Optical investigation of modified Stranski–Krastanov growth mode in the stacking of self-assembled Ge islands , 2000 .

[76]  O. Schmidt,et al.  Probing the lateral composition profile of self-assembled islands. , 2003, Physical review letters.

[77]  Akira Sakai,et al.  Nanometer-scale imaging of strain in Ge island on Si(001) surface , 1999 .

[78]  T. Tatsumi,et al.  Near‐band‐gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxy , 1990 .

[79]  K. Brunner,et al.  Si/Ge nanostructures , 2002 .

[80]  Oliver G. Schmidt,et al.  Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation , 2000 .

[81]  R. Beserman,et al.  Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate , 1998 .

[82]  G Bauer,et al.  Direct determination of strain and composition profiles in SiGe islands by anomalous x-Ray diffraction at high momentum transfer. , 2003, Physical review letters.

[83]  C. Chiu.  Stable and uniform arrays of self-assembled nanocrystalline islands , 2004 .

[84]  Ross,et al.  Transition States Between Pyramids and Domes During Ge/Si Island Growth. , 1999, Science.

[85]  M. L. W. Thewalt,et al.  Exciton luminescence in Si1−xGex/Si heterostructures grown by molecular beam epitaxy , 1993 .

[86]  A. V. Novikov,et al.  Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands , 2005 .

[87]  Sinclair,et al.  Novel SiGe island coarsening kinetics: ostwald ripening and elastic interactions , 2000, Physical review letters.

[88]  Michael Mühlberger,et al.  Ge island formation on stripe-patterned Si(001) substrates , 2003 .

[89]  Akira Sakai,et al.  Ge growth on Si using atomic hydrogen as a surfactant , 1994 .

[90]  R. S. Williams,et al.  Direct evaluation of composition profile, strain relaxation, and elastic energy of Ge:Si(001) self-assembled islands by anomalous x-ray scattering , 2002 .

[91]  A. Peaker,et al.  Hole trapping in self-assembled SiGe quantum nanostructures , 2003 .

[92]  Sturm,et al.  Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells. , 1991, Physical review letters.

[93]  J. E. Bernard,et al.  Extended shape evolution of low mismatch Si1−xGex alloy islands on Si(100) , 2004 .

[94]  Gerhard Abstreiter,et al.  Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples , 1998 .

[95]  Yves Campidelli,et al.  Optical recombination from excited states in Ge/Si self-assembled quantum dots , 2001 .

[96]  Xun Wang,et al.  Strain relaxation by alloying effects in Ge islands grown on Si(001) , 1999 .

[97]  Christian Teichert,et al.  Self-organization of nanostructures in semiconductor heteroepitaxy , 2002 .

[98]  D. Houghton,et al.  Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloys , 1990 .

[99]  A. Larsen,et al.  Self-assembly of epitaxially grown Ge/Si quantum dots enhanced by As ion implantation , 2001 .

[100]  I. Berbezier,et al.  SiGe nanostructures: new insights into growth processes , 2002 .

[101]  J. Sturm,et al.  Quantum confinement effects in strained silicon‐germanium alloy quantum wells , 1992 .

[102]  Oliver G. Schmidt,et al.  C-induced Ge dots : a versatile tool to fabricate ultra-small Ge nanostructures , 1998 .

[103]  Zhong Pan,et al.  Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy , 2000 .

[104]  Qiyuan Wang,et al.  Atomic-force-microscopy investigation of the formation and evolution of Ge islands on GexSi1−x strained layers , 2000 .

[105]  David Smith,et al.  Evolution of Ge/Si(100) islands: Island size and temperature dependence , 2000 .

[106]  Jacobson,et al.  Growth morphology and the equilibrium shape: The role of "surfactants" in Ge/Si island formation. , 1993, Physical review letters.

[107]  Mathieu Stoffel,et al.  Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001) , 2003 .

[108]  Feng Liu,et al.  SELF-ORGANIZATION OF STEPS IN GROWTH OF STRAINED FILMS ON VICINAL SUBSTRATES , 1998 .

[109]  A. V. Novikov,et al.  Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer , 2005 .

[110]  Williams,et al.  Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes , 1998, Science.

[111]  B. Holländer,et al.  Self-assembling of Ge on finite Si(001) areas comparable with the island size , 2003 .

[112]  Sirota,et al.  X-ray and neutron scattering from rough surfaces. , 1988, Physical review. B, Condensed matter.

[113]  J. Tersoff,et al.  Competing relaxation mechanisms in strained layers. , 1994, Physical review letters.

[114]  O. Schmidt,et al.  Ge hut cluster luminescence below bulk Ge band gap , 2003 .

[115]  Frank Fournel,et al.  Ordering of Ge quantum dots with buried Si dislocation networks , 2002 .

[116]  Eaglesham,et al.  Dislocation-free Stranski-Krastanow growth of Ge on Si(100). , 1990, Physical review letters.

[117]  Oliver G. Schmidt,et al.  Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface , 2000 .

[118]  W. Tiller,et al.  Interface morphology development during stress corrosion cracking: Part I. Via surface diffusion , 1972 .

[119]  Oliver G. Schmidt,et al.  Photoluminescence Study of the 2D–3D Growth Mode Changeover for Different Ge/Si Island Phases , 1999 .

[120]  Klaus Kern,et al.  Nucleation of Ge quantum dots on the C-alloyed Si 001 surface , 2000 .

[121]  Bich-Yen Nguyen,et al.  Controlled arrangement of self-organized Ge islands on patterned Si (001) substrates , 1999 .

[122]  G. Bauer,et al.  Growth of Ge islands on prepatterned Si (0 0 1) substrates , 2004 .

[123]  U. Gösele,et al.  Precise control of size and density of self-assembled Ge dot on Si(1 0 0) by carbon-induced strain-engineering , 2003 .

[124]  Oliver G. Schmidt,et al.  Photoluminescence study of the initial stages of island formation for Ge pyramids/domes and hut clusters on Si(001) , 1999 .

[125]  V. Yam,et al.  Superlattices of self-assembled Ge/Si(0 0 1) quantum dots , 2003 .

[126]  Oliver G. Schmidt,et al.  Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) , 2002 .

[127]  E. Müller,et al.  Shape preservation of Ge/Si(001) islands during Si capping , 2002 .

[128]  Lateral motion of SiGe islands driven by surface-mediated alloying. , 2005, Physical review letters.

[129]  Wei Zhang,et al.  Positioning of self-assembled, single-crystal, germanium islands by silicon nanoimprinting , 1999 .

[130]  G. Bauer,et al.  Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates , 2003 .

[131]  D. Bouchier,et al.  Photoluminescence of self-assembled Ge dots grown by ultra-high-vacuum chemical vapor deposition , 1998 .

[132]  R. Stanley Williams,et al.  Evolution of Ge islands on Si(001) during annealing , 1999 .

[133]  Buwen Cheng,et al.  Shape evolution of Ge/Si(001) islands induced by strain-driven alloying , 2001 .

[134]  B. Voigtländer,et al.  Ordered growth of Ge islands above a misfit dislocation network in a Ge layer on Si(111) , 2000 .

[135]  S. A. Chaparro,et al.  DIFFUSIONAL NARROWING OF GE ON SI(100) COHERENT ISLAND QUANTUM DOT SIZE DISTRIBUTIONS , 1997 .

[136]  P. Voorhees,et al.  Role of strain-dependent surface energies in Ge/Si(100) island formation. , 2005, Physical review letters.

[137]  S. Moisa,et al.  Molecular beam epitaxy synthesis of Si1-yCy and Si1-x-yGexCy alloys and Ge islands using an electron cyclotron resonance argon/methane plasma , 2002 .

[138]  Silke Christiansen,et al.  Composition of self-assembled Ge/si islands in single and multiple layers , 2002 .

[139]  R. Kukta,et al.  On the mechanisms of epitaxial island alignment on patterned substrates , 2005 .

[140]  G. Capellini,et al.  Ge/Si(100) islands: growth dynamics versus growth rate , 2003 .

[141]  Matthias Bauer,et al.  Interplay of dislocation network and island arrangement in SiGe films grown on Si(001) , 2000 .

[142]  Yangting Zhang,et al.  Annealing-induced Ge/Si(100) island evolution , 2003 .

[143]  Ning Deng,et al.  Self-assembled SiGe islands with uniform shape and size by controlling Si concentration in islands , 2004 .

[144]  Kunihiro Sakamoto,et al.  Alignment of Ge three-dimensional islands on faceted Si(001) surfaces , 1998 .

[145]  Mikhail A. Grinfel'D,et al.  Instability of the separation boundary between a nonhydrostatically stressed elastic body and a melt , 1986 .

[146]  Massimo Celino,et al.  Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate , 2002 .

[147]  F. Volpi,et al.  Sb segregation in Si and SiGe: effect on the growth of self-organised Ge dots , 2000 .

[148]  D. J. Lockwood,et al.  Self-organized Nanoscale Materials , 2006 .

[149]  Mark Hopkinson,et al.  Stranski-Krastanow transition and epitaxial island growth , 2002 .

[150]  V. Yam,et al.  Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(0 0 1) surfaces , 2004 .

[151]  John C. Bean,et al.  Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures , 1985 .

[152]  O. Schmidt,et al.  Pyramids and domes in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems , 2005 .

[153]  Nunzio Motta,et al.  Ge-Si intermixing in Ge quantum dots on Si(001) and Si(111) , 2000 .

[154]  David J. Lockwood,et al.  Strain in coherent-wave SiGe/Si superlattices , 2000 .

[155]  V. L. Thanh,et al.  Growth and optical properties of Ge/Si quantum dots formed on patterned SiO2/Si(001) substrates , 2004 .

[156]  David J. Lockwood,et al.  Si1−x−yGexCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy , 2002 .

[157]  M. Lagally,et al.  Self-organization in growth of quantum dot superlattices. , 1996, Physical review letters.

[158]  O. Schmidt,et al.  Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction , 2003 .

[159]  P. Sonnet,et al.  Physical origin of trench formation in Ge/Si(100) islands , 2004 .

[160]  N. Ledentsov,et al.  Spontaneous ordering of arrays of coherent strained islands. , 1995, Physical review letters.

[161]  D. Zahn,et al.  Phonons in Ge/Si superlattices with Ge quantum dots , 2001 .

[162]  M. Goryll,et al.  Morphology and photoluminescence of Ge islands grown on Si(001) , 1998 .

[163]  O. Schmidt,et al.  Composition of self assembled Ge hut clusters , 2003 .

[164]  Oliver G. Schmidt,et al.  Strain and composition distribution in uncapped SiGe islands from x-ray diffraction , 2001 .

[165]  G. Bauer,et al.  Site-controlled and size-homogeneous Ge islands on prepatterned Si (001) substrates , 2004 .

[166]  Peter W. Voorhees,et al.  Ordered growth of nanocrystals via a morphological instability , 2002 .

[167]  H. Sunamura,et al.  Suppression of phonon replica in the radiative recombination of an MBE-grown type-II Ge/Si quantum dot , 1998 .