论文信息 - Ellipsometry of Silicon with Natural Surface Film at 632.8 nm

Ellipsometry of Silicon with Natural Surface Film at 632.8 nm

Analyse du comportement des parametres ellipsometriques Δ et ψ pour plusieurs angles d'incidence, dans le cas de Si cristallin recouvert d'une couche mince formee au cours de la conservation; influence de la temperature sur Δ et ψ entre 21° et 115°C. Mise en evidence de la possibilite de determination de la partie reelle de l'indice de refraction complexe de Si et de l'indice et de l'epaisseur de la couche mince

F. Lukes̆

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