Ballistic transport modeling in advanced transistors

This paper develops a methodology for the modeling and analysis of ballistic transport in advanced transistors. A Matlab model of ballistic transport modeling for multi-gate transistor is described. Due to scaling, device sizes are becoming smaller and ballistic transport modeling is getting importance in nano-transistors. In case of ballistic transport, carrier moves without collision and scattering across the channel. Non-equilibrium green function (NEGF) for the computation of ballistic IV curves in case of a ballistic nanotransistor is also discussed in this paper. A comparison between the ballistic IV curves obtained by two approaches: drift-diffusion (DD_MS) and non-equilibrium green function (NEGF_MS) is also made.