论文信息 - Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb

Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb

Room temperature photoluminescence at 1.6μm is demonstrated from InGaAs quantum dots capped with an 8nm GaAsSb quantum well. Results obtained from various sample structures are compared, including samples capped with GaAs. The observed redshift in GaAsSb capped samples is attributed to a type II band alignment and to a beneficial modification of growth kinetics during capping due to the presence of Sb. The sample structure is discussed on the basis of transmission electron microscopy results.

[1] Richard A. Hogg,et al. Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer , 2005 .

[2] Alexey E. Zhukov,et al. GaAs-based long-wavelength lasers , 2000 .

[3] A. Stintz,et al. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers , 2003 .

[4] N. Yamamoto,et al. Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates , 2004 .

[5] R. M. Biefeld,et al. The effect of antimony in the growth of indium arsenide quantum dots in gallium arsenide (001) , 2005 .

[6] T. Jones,et al. Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters , 2003 .

[7] A. R. Kovsh,et al. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm , 1999 .

[8] A. P. Vasil’ev,et al. High performance quantum dot lasers on GaAs substrates operating in 1.5 /spl mu/m range , 2003 .

[9] M. Hopkinson,et al. Optical characteristics of 1.55 μm GaInNAs multiple quantum wells , 2004 .

[10] J. Chyi,et al. Electroreflectance studies of InAs quantum dots with InxGa1−xAs capping layer grown by metalorganic chemical vapor deposition , 2005 .

[11] P. Werner,et al. Ripening of self-organized InAs quantum dots , 2004 .

[12] I. Sagnes,et al. Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots , 2002 .