Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

Abstract In this work we report an experimental observation of the current dependence on the defect generation probability driving to breakdown. We propose the MVHR model (multi-vibrational hydrogen release) based on the multi-vibrational excitation of the Si–H bond stretching mode. By this way we explain the power-law dependence of charge and time to breakdown and highlight its limit on PMOS inversion.

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