Liquid phase epitaxial growth of GaAs from AuGeNi melts
暂无分享,去创建一个
[1] M. Otsubo,et al. Preferential Etching of GaAs Through Photoresist Masks , 1976 .
[2] H. Hartnagel,et al. Thin-phase epitaxy for good semiconductor metal ohmic contacts , 1975, IEEE Transactions on Electron Devices.
[3] N. Yokoyama,et al. Effects of the Heating Rate in Alloying of An-Ge to n-Type GaAs on the Ohmic Properties , 1975 .
[4] V. L. Rideout,et al. A review of the theory and technology for ohmic contacts to group III–V compound semiconductors , 1975 .
[5] G. Y. Robinson,et al. Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAs , 1975 .
[6] H. Hartnagel,et al. New method for producing ideal metal-semiconductor ohmic contacts , 1974 .
[7] T. Nakanisi. An Internal Friction Study on the Alloying Behaviour of Au-GaAs Contact , 1973 .
[8] K. Shih,et al. Contact resistances of AuGeNi, AuZn and Al to III–V compounds , 1972 .
[9] A. M. Andrews,et al. Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts☆ , 1972 .
[10] A. B. Torrens,et al. Specific contact resistance of ohmic contacts to gallium arsenide , 1972 .
[11] B. Pruniaux. Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor System , 1971 .
[12] J. Mayer,et al. Alloying Behavior of Au and Au–Ge on GaAs , 1971 .
[13] G. L. Pearson,et al. Ohmic Contacts to Solution‐Grown Gallium Arsenide , 1969 .
[14] I. Hayashi,et al. A technique for the preparation of low-threshold room-temperature GaAs laser diode structures , 1969 .
[15] R. Stratton,et al. Effect of Nonuniform Conductivity on the Behavior of Gunn Effect Samples , 1968 .
[16] N. Braslau,et al. Metal-semiconductor contacts for GaAs bulk effect devices , 1967 .
[17] L. Bernstein. Alloying to III – V Compound Surfaces , 1962 .