Collective Structural Relaxation in Phase‐Change Memory Devices

DOI: 10.1002/aelm.201700627 capability is also appealing for emerging applications in non-von Neumann computing such as computational memory.[7– 11] It also facilitates applications in brain-inspired neuromorphic computing where PCM devices are used to emulate synaptic and neuronal behavior.[12–14] A key challenge in all these application domains is the temporal evolution of resistance levels commonly referred to as resistance drift.[15] These resistance variations are caused mostly by the phase-change material in the amorphous phase. At constant ambient temperature, the resistance typically exhibits a temporal dependence characterized by

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