Future Prospect of Nanoelectronic Devices

A significant approach to enhance information throughput beyond the traditional scaling is to integrate the best features of the current memories into a fabrication technology compatible with CMOS technology process with better scalability than SRAM and FLASH [1]. The fabrication technology should be applicable to both stand-alone and embedded memory applications. A major detractor of MPU ability to execute programs is the time delay needed for transferring data between the processor and memory. Such a fabrication technology can increase MPU cache memory which yields a much faster data processing. Furthermore, the development of high speed and high density random access nonvolatile memory is a great success in computer architecture.