Electrochemical modifications at the nanometer scale on Si(100) surfaces with Scanning Tunnelling Microscopy

Abstract Scanning Tunnelling Microscopy is used as a tool to produce nanometer scale modifications on hydrogen passivated silicon (100) surfaces under positive and negative sample vs. tip voltage. Experiments have been performed in air and `in situ' in an HF solution. In air, it is found that under both polarities the surface under the tip becomes oxidized and that the oxidation is possible although no tunnelling current flows between tip and sample. Taking into account the band bending in the semiconductor, it is shown that the oxidation is a field induced process. Experiments `in situ' demonstrate that two different mechanisms exist: oxidation at anodic polarization and direct silicon etching at cathodic polarization.

[1]  E. Snow,et al.  Fabrication of Si nanostructures with an atomic force microscope , 1994 .

[2]  David R. Allee,et al.  Selective area oxidation of silicon with a scanning force microscope , 1993 .

[3]  Yan Li,et al.  Writing nanometer-scale symbols in gold using the scanning tunneling microscope , 1989 .

[4]  Y. Chabal,et al.  Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation. , 1990, Physical review letters.

[5]  J. Lyding,et al.  Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces , 1994 .

[6]  T. Thundat,et al.  Nanolithography on semiconductor surfaces under an etching solution , 1990 .

[7]  J. Schneir,et al.  Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air , 1991 .

[8]  P. Avouris,et al.  Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STM , 1991, Science.

[9]  P. West,et al.  Current–voltage characteristics of silicon measured with the scanning tunneling microscope in air , 1989 .

[10]  G. Abadal,et al.  Field induced nanomodification on silicon (100) with scanning tunneling microscopy , 1995 .

[11]  Hiroyuki Sugimura,et al.  Chemical Approach to Nanofabrication: Modifications of Silicon Surfaces Patterned by Scanning Probe Anodization , 1995 .

[12]  N. Barniol,et al.  Modification of HF‐treated silicon (100) surfaces by scanning tunneling microscopy in air under imaging conditions , 1992 .

[13]  S. M. Sze.  Physics of semiconductor devices /2nd edition/ , 1981 .

[14]  Michael T. Postek,et al.  Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air , 1990 .

[15]  John R. Tucker,et al.  Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope , 1994 .