Title Three-dimensional crossbar arrays of self-rectifying Si / SiO 2 / Si memristors

[1]  Kate J. Norris,et al.  Anatomy of Ag/Hafnia‐Based Selectors with 1010 Nonlinearity , 2017, Advanced materials.

[2]  gt hutilisateurs,et al.  IEEE International Electron Devices Meeting (IEDM) , 2016 .

[3]  Kate J. Norris,et al.  Trilayer Tunnel Selectors for Memristor Memory Cells , 2015, Advanced materials.

[4]  황현상.  Improved Threshold Switching Characteristics of Multi-layer NbOx for 3-D Selector Application , 2015 .

[5]  Qiangfei Xia,et al.  Nanoscale memristive radiofrequency switches , 2015, Nature Communications.

[6]  Doo Seok Jeong,et al.  A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View , 2014 .

[7]  Fei Zhou,et al.  Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing , 2014 .

[8]  Fei Zhou,et al.  Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization , 2014 .

[9]  Li Ji,et al.  Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography. , 2014, Nano letters.

[10]  Peng Lin,et al.  Cross point arrays of 8 nm × 8 nm memristive devices fabricated with nanoimprint lithography , 2013 .

[11]  James M Tour,et al.  High‐Performance and Low‐Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array , 2013, Advanced materials.

[12]  Hao Jiang,et al.  Low voltage resistive switching devices based on chemically produced silicon oxide , 2013 .

[13]  K. Benthem,et al.  Characterization of defect evolution in ultrathin SiO2 layers under applied electrical stress , 2012 .

[14]  Steven G. Johnson,et al.  Three-dimensional photonic crystals by large-area membrane stacking. , 2012, Optics letters.

[15]  R Stanley Williams,et al.  Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices , 2012, Nanotechnology.

[16]  Shimeng Yu,et al.  Metal–Oxide RRAM , 2012, Proceedings of the IEEE.

[17]  Yuchao Yang,et al.  Complementary resistive switching in tantalum oxide-based resistive memory devices , 2012, 1204.3515.

[18]  C. Chung,et al.  Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices , 2012, IEEE Electron Device Letters.

[19]  R. Williams,et al.  Sub-nanosecond switching of a tantalum oxide memristor , 2011, Nanotechnology.

[20]  Henry I. Smith,et al.  3D nanostructures by stacking pre-patterned fluid-supported single-crystal Si membranes , 2011 .

[21]  Raeed H. Chowdhury,et al.  Epidermal Electronics , 2011, Science.

[22]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[23]  Chao Zhang,et al.  Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory , 2011, IEEE Electron Device Letters.

[24]  Shimeng Yu,et al.  Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory , 2011 .

[25]  Heung Cho Ko,et al.  Arrays of silicon micro/nanostructures formed in suspended configurations for deterministic assembly using flat and roller-type stamps. , 2011, Small.

[26]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.

[27]  Wei Yang Lu,et al.  Nanoscale memristor device as synapse in neuromorphic systems. , 2010, Nano letters.

[28]  Siddharth Gaba,et al.  Nanoscale resistive memory with intrinsic diode characteristics and long endurance , 2010 .

[29]  R. Rosezin,et al.  High density 3D memory architecture based on the resistive switching effect , 2009 .

[30]  Warren Robinett,et al.  Memristor-CMOS hybrid integrated circuits for reconfigurable logic. , 2009, Nano letters.

[31]  D. Stewart,et al.  The missing memristor found , 2009, Nature.

[32]  M. J. van Duuren,et al.  Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories , 2007 .

[33]  Salvatore Lombardo,et al.  Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown , 2001 .

[34]  林 靖夫,et al.  1996 International Electron Devices Meeting(1996 IEDM) , 1997 .

[35]  Nuggehalli M. Ravindra,et al.  Fowler-Nordheim tunneling in thin SiO2 films , 1992 .

[36]  L. Chua.  Memristor-The missing circuit element , 1971 .

[37]  J. Yang,et al.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. , 2017, Nature materials.

[38]  Tuo-Hung Hou,et al.  Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector–One Resistor Crossbar Array , 2013, IEEE Transactions on Electron Devices.

[39]  J Joshua Yang,et al.  Memristive devices for computing. , 2013, Nature nanotechnology.

[40]  Lewis Winner,et al.  1972 IEEE International Solid-State Circuits Conference : digest of technical papers : ISSCC , 1969 .

[41]  R. Gurney,et al.  Electronic Processes in Ionic Crystals , 1964 .