‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability

SiC MOSFETs have a low short circuit withstand time. To address this challenge, a soft shut down and two original detection methods are proposed in this paper, easily implemented and based-on (ig, vgs) diagnosis with no direct time dependency. The first one is dedicated for SiC MOSFETs using his gate-leakage thermal runaway current, and the second one is more general and faster using the gate-charge monitoring. Both are experimentally validated and compared in terms of response-time and robustness capability.

[1]  Dominique Planson,et al.  Silicon carbide power devices , 1998, 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).

[2]  Frédéric Richardeau,et al.  Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation , 2017, Microelectron. Reliab..

[3]  Mark-M. Bakran,et al.  Integrating the New 2D — Short circuit detection method into a power module with a power supply fed by the gate voltage , 2016, 2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC).

[4]  H. Akagi,et al.  A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs , 2015, 2015 IEEE Energy Conversion Congress and Exposition (ECCE).

[5]  Wei Jia Zhang,et al.  A Smart IGBT Gate Driver IC With Temperature Compensated Collector Current Sensing , 2019, IEEE Transactions on Power Electronics.

[6]  Teresa Bertelshofer,et al.  Design Rules to Adapt the Desaturation Detection for SiC MOSFET Modules , 2017 .

[7]  Hans-Peter Nee,et al.  Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors , 2016, IEEE Transactions on Industrial Electronics.

[8]  Nicolas Rouger,et al.  Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors , 2021, Math. Comput. Simul..

[9]  Karl Oberdieck,et al.  Short circuit detection using the gate charge characteristic for Trench/Fieldstop-IGBTs , 2016, 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe).

[10]  F. Richardeau,et al.  Physical Origin of the Gate Current Surge During Short-Circuit Operation of SiC MOSFET , 2019, IEEE Electron Device Letters.

[11]  Sibylle Dieckerhoff,et al.  Short-circuit evaluation and overcurrent protection for SiC power MOSFETs , 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).

[12]  A. Irace,et al.  Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs , 2016, 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).