论文信息 - Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Etch Pits on 4H-SiC Surface Produced by ClF3 Gas

Selective etching on the surface of single-crystalline 4H-SiC was performed using ClF3 gas at 700 K and at atmospheric pressure in a cold wall reactor. The etch pits at the Si-face and C-face 4H-SiC surface may have relationship with the threading edge and screw dislocation.

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