Modeling and Analysis of Large-Signal RFI Effects in MOS Transistors
暂无分享,去创建一个
Laurent Chusseau | Alain Reineix | Jérémy Raoult | François Torrès | A. Reineix | J. Raoult | P. Hoffmann | L. Chusseau | F. Torrès | C. Pouant | Clovis Pouant | Patrick Hoffmann
[1] M.G. Backstrom,et al. Susceptibility of electronic systems to high-power microwaves: summary of test experience , 2004, IEEE Transactions on Electromagnetic Compatibility.
[2] RF interference effects on PIN photodiodes , 1995 .
[3] R. Richardson,et al. Microwave-Rectification RFI Response in Field-Effect Transistors , 1979, IEEE Transactions on Electromagnetic Compatibility.
[4] Bruno Ben M'Hamed,et al. Complete Time-Domain Diode Modeling: Application to Off-Chip and On-Chip Protection Devices , 2011, IEEE Transactions on Electromagnetic Compatibility.
[5] J.L. ter Haseborg,et al. Susceptibility of some electronic equipment to HPEM threats , 2004, IEEE Transactions on Electromagnetic Compatibility.
[6] H. Y. David Yang,et al. Analysis of High-Power RF Interference on Digital Circuits , 2006 .
[7] Victor L. Granatstein,et al. Effects of microwave interference on the operational parameters of n-channel enhancement mode MOSFET devices in CMOS integrated circuits , 2004 .
[8] James M. Roe,et al. A Modified Ebers-Moll Transistor Model for RF Interference Analysis , 1978 .
[9] D.B.M. Klaassen,et al. A large signal non-quasi-static MOS model for RF circuit simulation , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[10] R. Richardson,et al. Microwave Interference Effect in Bipolar Transistors , 1975, IEEE Transactions on Electromagnetic Compatibility.
[11] Kathleen L. Melde,et al. Impact of Ground via Placement in Grounded Coplanar Waveguide Interconnects , 2016, IEEE Transactions on Components, Packaging and Manufacturing Technology.
[12] R. Richardson. Modeling of Low-Level Rectification RFI in Bipolar Circuitry , 1979, IEEE Transactions on Electromagnetic Compatibility.
[13] F.M. Tesche,et al. Classification of intentional electromagnetic environments (IEME) , 2004, IEEE Transactions on Electromagnetic Compatibility.
[14] Z. Dilli,et al. Study of Basic Effects of HPM Pulses in Digital CMOS Integrated Circuit Inputs , 2012, IEEE Transactions on Electromagnetic Compatibility.
[15] D. Lathrop,et al. Chaotic Oscillations in a CMOS Inverter Coupled With ESD Protection Circuits Under Radio Wave Excitation , 2014, IEEE Transactions on Electromagnetic Compatibility.
[16] J. Raoult,et al. Control of a mos inverter by out-of-band pulsed microwave excitation , 2017 .
[17] R. E. Richardson. Quiescent operating point shift in bipolar transistors with AC excitation , 1979 .
[18] F. Brauer,et al. Susceptibility of IT network systems to interferences by HPEM , 2009, 2009 IEEE International Symposium on Electromagnetic Compatibility.
[19] E. Sicard,et al. Towards an EMC roadmap for Integrated Circuits , 2008, 2008 Asia-Pacific Symposium on Electromagnetic Compatibility and 19th International Zurich Symposium on Electromagnetic Compatibility.
[20] G.D.J. Smit,et al. The Physical Background of JUNCAP2 , 2006, IEEE Transactions on Electron Devices.
[21] Kye Chong Kim. High power microwave interference effects on analog and digital circuits in IC's , 2008 .
[22] Michael Andrew Holloway. Characterization and Modeling of High Power Microwave Effects in CMOS Microelectronics , 2010 .
[23] D.R. Jackson,et al. EMC coupling to a circuit board from a wire penetrating a cavity aperture , 2004, IEEE Antennas and Propagation Society Symposium, 2004..
[24] J. Raoult,et al. Large domain validity of MOSFET microwave-rectification response , 2015, 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo).