论文信息 - Heteroepitaxial relationships for CrSi2 thin films on Si(111)

Heteroepitaxial relationships for CrSi2 thin films on Si(111)

Vacuum evaporation techniques were applied to the epitaxial growth of CrSi2 on Si(111) substrates. There are two CrSi2 matching faces which offer good lattice matchings, and which are observed experimentally: the (001) and the (111). These are present together in films grown by reactive deposition at temperatures from 450 to 1000 °C, with the latter matching face becoming more dominant as the growth temperature is raised. During an anneal at 1100 °C, however, the regions of the (111) matching face disappear in films ≥∼84 A thick. Moderately good epitaxial alignment is obtained with the other matching face operative. Films ≤∼30 A thick yield an opposite result: they adopt exclusively the (111) matching face as a result of this anneal. For both heteroepitaxial relationships, a strong islanding tendency is manifested during growth (unless the CrSi2 layer is more than a few thousands of angstroms thick), which is accentuated by such a post‐growth anneal. The population of CrSi2 islands exhibits a gradual stra...

M. Nicolet | J. Mahan | A. Vantomme | J. Becker | Robert G. Long

[1] J. Mahan,et al. Reflection high-energy electron diffraction patterns of carbide-contaminated silicon surfaces , 1994 .

[2] M. Nicolet,et al. Reactive deposition epitaxy of crsi2 , 1993 .

[3] H. Lüth,et al. Ion beam synthesis of buried CrSi2 layers , 1993 .

[4] Mattheiss. Structural effects on the calculated semiconductor gap of CrSi2. , 1991, Physical review. B, Condensed matter.

[5] O. Madelung. Semiconductors : group IV elements and III-V compounds , 1991 .

[6] K. Geib,et al. Reflection high‐energy electron diffraction patterns of CrSi2 films on (111) silicon , 1991 .

[7] D. Eaglesham,et al. Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation , 1990 .

[8] B. Lönnberg,et al. Thermal expansion studies of the group IV‐VII transition‐metal disilicides , 1988 .

[9] R. Fathauer,et al. Molecular-beam epitaxy of CrSi2 on Si(111) , 1988 .

[10] M. C. Bost,et al. An investigation of the optical constants and band gap of chromium disilicide , 1988 .

[11] I. Markov,et al. Mechanisms of epitaxial growth , 1987 .

[12] K. Tu,et al. Temperature dependence of semiconducting and structural properties of Cr‐Si thin films , 1985 .

[13] P. R. Bevington,et al. Data Reduction and Error Analysis for the Physical Sciences , 1969 .

[14] M. Francombe,et al. Single-Crystal Films , 1965 .