Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 ± 0.23 and 0.79 ± 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations.

[1]  Weifeng Zhang,et al.  Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy , 2011, Nanoscale research letters.

[2]  N. Chen,et al.  Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy , 2009 .

[3]  J. Schubert,et al.  Ferroelectric thin film field-effect transistors based on ZnO/BaTiO3 heterostructures , 2009 .

[4]  M. Schubert,et al.  Resistive hysteresis and interface charge coupling in BaTiO3-ZnO heterostructures , 2009 .

[5]  Y. Guo,et al.  Erratum: “Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 94, 052101 (2009)] , 2009 .

[6]  Z. G. Wang,et al.  Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy , 2009 .

[7]  D. Muller,et al.  Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces , 2009 .

[8]  Y. H. Chen,et al.  Structural and optical properties of ZnO films on SrTiO3 substrates by MOCVD , 2009 .

[9]  C. Shan,et al.  Valence band offset of ZnO/Zn0.85Mg0.15O heterojunction measured by x-ray photoelectron spectroscopy , 2008 .

[10]  L. Largeau,et al.  Competition between InP and In2O3 islands during the growth of InP on SrTiO3 , 2008 .

[11]  B. Yao,et al.  Valence-band offset of epitaxial ZnO∕MgO (111) heterojunction determined by x-ray photoelectron spectroscopy , 2008 .

[12]  Z. G. Wang,et al.  Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy , 2008 .

[13]  Guanlin Xie,et al.  Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions , 2008 .

[14]  W. Jie,et al.  Heteroepitaxial growth of ZnO on perovskite surfaces , 2007 .

[15]  Hongyuan Wei,et al.  Determination of the valence band offset of wurtzite InN /ZnO heterojunction by x-ray photoelectron spectroscopy , 2007 .

[16]  W. Luo,et al.  Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy , 2007 .

[17]  Jürgen Schubert,et al.  Polarization coupling in epitaxial ZnO / BaTiO3 thin film heterostructures on SrTiO3 (100) substrates , 2007, SPIE OPTO.

[18]  KyongTae Kang,et al.  High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates , 2007 .

[19]  C. Merckling,et al.  Photoemission (XPS and XPD) study of epitaxial LaAlO3 film grown on SrTiO3(001) , 2006 .

[20]  H. Morkoç,et al.  Band offset measurements of ZnO∕6H-SiC heterostructure system , 2006 .

[21]  Ding-Yuan Chen,et al.  ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators , 2006 .

[22]  F. Ren,et al.  Measurement of Zn0.95Cd0.05O∕ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy , 2005 .

[23]  J. Guimpel,et al.  Tuning of the metal-insulator transition in La0.75Sr0.25MnO3∕PrBa2Cu3O7−δ superlattices , 2005 .

[24]  W. Mönch.  On the band structure lineup of ZnO heterostructures , 2005 .

[25]  M. Schubert,et al.  Temperature-dependent dielectric and electro-optic properties of a ZnO-BaTiO3-ZnO heterostructure grown by pulsed-laser deposition , 2005 .

[26]  J. Curless,et al.  Band alignment at epitaxial SrTiO3–GaAs(001) heterojunction , 2005 .

[27]  E. Bellingeri,et al.  High mobility in ZnO thin films deposited on perovskite substrates with a low temperature nucleation layer , 2005 .

[28]  M. Gutowski,et al.  Experimental determination of valence band maxima for SrTiO3, TiO2, and SrO and the associated valence band offsets with Si(001) , 2004 .

[29]  A. Kahn,et al.  Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si(100) , 2004 .

[30]  X. Pan,et al.  Evolution of dislocation arrays in epitaxial BaTiO3 thin films grown on (100) SrTiO3 , 2004 .

[31]  W. Mönch.  Electronic Properties of Semiconductor Interfaces , 2004 .

[32]  R. Droopad,et al.  Band offset and structure of SrTiO3 /Si(001) heterojunctions , 2001 .

[33]  Hadis Morkoç,et al.  Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy , 1996 .

[34]  Priester,et al.  Band-offset transitivity in strained (001) heterointerfaces. , 1992, Physical review. B, Condensed matter.

[35]  J. White,et al.  Two-photon absorption and anisotropic transient energy transfer in BaTiO 3 with 1-psec excitation , 1990 .

[36]  A. Kahn,et al.  Band offsets at heterojunctions between SrTiO[sub 3] and BaTiO[sub 3] and Si(100) , 2004 .