论文信息 - Characterization of InGaN/GaN heterostructures by means of RBS/channeling - 字舞流文

Characterization of InGaN/GaN heterostructures by means of RBS/channeling

J. Baranowski | K. Pakuła | A. Turos | R. Ratajczak | L. Nowicki | A. Stonert | R. Banasik

[1] W. Paszkowicz,et al. Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium , 1999 .

[2] I. Moerman,et al. Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study , 1999 .

[3] Theodore D. Moustakas,et al. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy , 1998 .

[4] N. El-Masry,et al. Phase separation in InGaN grown by metalorganic chemical vapor deposition , 1998 .

[5] Masahiko Sano,et al. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices , 1997 .

[6] Theodore D. Moustakas,et al. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition , 1997 .

[7] S. Mahajan,et al. Microstructural characteristics of mixed III–V epitaxial layers , 1995 .

[8] Nae-Eung Lee,et al. Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties , 1993 .