Hot hole inter-sub-band transition p-Ge FIR laser

This paper presents a review of operating principles, numerical results and the achieved characteristics of the hot hole FIR laser. The problems of Landau quantization and crystallographic anisotropy are discussed. This information gives an idea of the achievements and difficulties of the development of far-infrared (FIR) semiconductor lasers using hot hole inter-sub-band transitions inp-Ge.

[1]  Komiyama,et al.  Remarkable effects of uniaxial stress on the far-infrared laser emission in p-type Ge. , 1988, Physical review. B, Condensed matter.

[2]  R. Bray,et al.  Experimental Determination of the Energy Distribution Functions and Analysis of the Energy-Loss Mechanisms of Hot Carriers in p-Type Germanium , 1964 .

[3]  P. Wolff.  Proposal for a cyclotron resonance maser in InSb , 1964 .

[4]  M. Brown,et al.  Electric-Field-Induced Modulation of the Absorption Due to Interband Transitions of Free Holes in Germanium , 1961 .

[5]  H. Krömer.  Proposed Negative-Mass Microwave Amplifier , 1958 .

[6]  E. Haller,et al.  New results on stimulated emission from p-Germanium in crossed fields , 1988 .

[7]  T. Kurosawa,et al.  Hot Electron Population Inversion in Crossed Electric and Magnetic Fields , 1972 .

[8]  E. Kane,et al.  Energy band structure in p-type germanium and silicon , 1956 .

[9]  Susumu Komiyama,et al.  Far-infrared laser oscillation in p-Ge , 1986 .

[10]  S. Komiyama,et al.  Evidence for induced far‐infrared emission from p‐Ge in crossed electric and magnetic fields , 1985 .

[11]  E. V. Starikov,et al.  Far Infrared Absorption by Hot Holes in p‐Ge under E ⟂ B Fields , 1985 .

[12]  W. Harrison,et al.  Proceedings of the 17th International Conference on the Physics of Semiconductors , 1985 .

[13]  Fritz Keilmann,et al.  Lattice absorption of Ge in the far infrared , 1989 .

[14]  W. Fawcett,et al.  Electron population inversion in GaAs induced by high electric fields , 1969 .

[15]  A. H. Kahn,et al.  Theory of the Infrared Absorption of Carriers in Germanium and Silicon , 1955 .

[16]  M. Lax,et al.  Infrared Lattice Absorption in Ionic and Homopolar Crystals , 1955 .

[17]  A. Andronov,et al.  Hot electron streaming and population inversion for polar and deformation scattering , 1980 .

[18]  T. Kurosawa,et al.  Monte Carlo Calculation of Hot Electron Phenomena. I. Streaming in the Absence of a Magnetic Field , 1971 .

[19]  V. Kozlov.  Tunable Far Infrared Semiconductor Lasers , 1987 .

[20]  W. Kaiser,et al.  Infrared Absorption in P-Type Germanium , 1953 .

[21]  Valery N. Shastin,et al.  Tunable fir lasers in semiconductors using hot holes , 1987 .

[22]  E. Haller,et al.  Mode structure of the p-germanium far-infrared laser with and without external mirrors: Single line operation , 1988 .

[23]  M. Combescot,et al.  The dielectric constant and plasma frequency of p-type Ge like semiconductors , 1972 .