Heavy-Ion Induced Single Event Upsets in a Bipolar Logic Device

We present heavy ion test results for a bipolar logic device of moderate complexity. Such devices require the implementation of special techniques for testing circuits of varying upset sensitivity, and unlike similar MOS devices, present problems with test data interpretation.

[1]  E. C. Smith,et al.  Simulation of Cosmic-Ray Induced Soft Errors and Latchup in Integrated-Circuit Computer Memories , 1979, IEEE Transactions on Nuclear Science.

[2]  J. L. Andrews,et al.  The Dependence of Single Event Upset on Proton Energy (15-590 MeV) , 1982, IEEE Transactions on Nuclear Science.

[3]  G.A. Sai-Halasz,et al.  Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits , 1980, IEEE Electron Device Letters.

[4]  D. K. Nichols,et al.  Investigation for Single-Event Upset in MSI Devices , 1981, IEEE Transactions on Nuclear Science.

[5]  D. K. Nichols,et al.  Single Event Upset Sensitivity of Low Power Schottky Devices , 1982, IEEE Transactions on Nuclear Science.

[6]  D. K. Nichols,et al.  A Prediction Model for Bipolar RAMs in a High Energy Ion/Proton Environment , 1981, IEEE Transactions on Nuclear Science.

[7]  J. C. Pickel,et al.  Cosmic Ray Induced Errors in I2L Microprocessors and Logic Devices , 1981, IEEE Transactions on Nuclear Science.