IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC

In this paper, DI defects are studied via experiments and calculations. The 2 MeV H+ is used to carry on an ion-beam-induced luminescence (IBIL) experiment to measure the in-situ luminescence of untreated and annealed 4H-SiC at 100 K. The results show that the luminescence intensity decreases rapidly with increasing H+ fluence, which means the losses of optical defect centers. In addition, the evident peak at 597 nm (2.07 eV) is the characteristic peak of 4H-SiC, and the weak peak between 400 nm and 450 nm is attributed to the DI optical center. Moreover, the first-principles calculation of 4H-SiC is adopted to discuss the origin of DI defects. The optical transition of the defect SiC(CSi)2 from q = 0 to q = 1 is considered the experimental value of the DI defect center.

[1]  J. Gong,et al.  Antisite Defect SiC as a Source of the DI Center in 4H‐SiC , 2022, physica status solidi (RRL) – Rapid Research Letters.

[2]  Guangfu Wang,et al.  In situ luminescence measurement of 6H-SiC at low temperature , 2020 .

[3]  P. La,et al.  Electronic structures and optical properties of Ni-doped 4H-SiC: dispersion-corrected density functional theory investigations , 2019, Materials Research Express.

[4]  Guangfu Wang,et al.  Development of an ion beam induced luminescence set-up with a temperature controlled target stage and its application , 2019, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

[5]  Marjorie Bertolus,et al.  Electronic structure calculations of positron lifetimes in SiC: Self-consistent schemes and relaxation effect , 2014 .

[6]  W. J. Weber,et al.  Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC , 2013 .

[7]  T. Shikama,et al.  Radioluminescence for in situ materials characterization: First results on SiC for fusion applications , 2011 .

[8]  Zhang Yuming,et al.  Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer , 2009 .

[9]  S. Öberg,et al.  Density functional theory calculation of the DI optical center in SiC , 2006 .

[10]  Fei Gao,et al.  Atomistic simulations on the thermal stability of the antisite pair in 3C- and 4H-SiC , 2006 .

[11]  U. Gerstmann,et al.  A New Model for the DI-Luminescence in 6H-SiC , 2005 .

[12]  U. Gerstmann,et al.  Silicon vacancy annealing andDIluminescence in6H−SiC , 2004 .

[13]  Alexander Mattausch,et al.  Ab initio study of the migration of intrinsic defects in 3C-SiC , 2003, cond-mat/0309704.

[14]  W. J. Choyke,et al.  Correlation between the antisite pair and the D-I center in SiC , 2003 .

[15]  S. Öberg,et al.  Alphabet luminescence lines in 4H-SiC , 2002 .

[16]  R. Nieminen,et al.  Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC , 2001 .

[17]  F. Bechstedt,et al.  On the nature of the D1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy , 2001 .

[18]  F. Bechstedt,et al.  Spin state of vacancies: From magnetic Jahn-Teller distortions to multiplets , 2000 .

[19]  G. Guillot,et al.  Electrical and optical characterisation of vanadium in 4H and 6H-SiC , 1999 .

[20]  Friedhelm Bechstedt,et al.  Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure , 1999 .

[21]  J. Rabolt,et al.  Electrical and optical properties of Ge–implanted 4H–SiC , 1999 .

[22]  A. Henry,et al.  Properties of the D 1 bound exciton in 4 H − SiC , 1999 .

[23]  A. Henry,et al.  The D1 Exciton in 4H‐SiC , 1998 .

[24]  E. Janzén,et al.  Crystalline imperfections in 4H SiC grown with a seeded Lely method , 1994 .

[25]  J. Schneider,et al.  Point defects in silicon carbide , 1993 .

[26]  A. Moritani,et al.  CONTROLLED SUBLIMATION GROWTH OF SINGLE CRYSTALLINE 4H-SIC AND 6H-SIC AND IDENTIFICATION OF POLYTYPES BY X-RAY DIFFRACTION , 1991 .

[27]  W. J. Choyke,et al.  Low‐temperature photoluminescence studies of chemical‐vapor‐deposition‐grown 3C‐SiC on Si , 1988 .

[28]  W. J. Choyke,et al.  Photoluminescence of Radiation Defects in Ion-Implanted 6 H SiC , 1972 .

[29]  W. J. Choyke,et al.  Photoluminescence of Radiation Defects in Cubic SiC: Localized Modes and Jahn-Teller Effect , 1971 .

[30]  N. W. Thibault.  Morphological and structural crystallography and optical properties of silicon carbide (SiC) , 1944 .

[31]  M. Godlewski,et al.  Photoluminescence and optically detected magnetic resonance investigations of wurtzite phase 4H–SiC , 2008 .

[32]  Yao Cunfeng.  FTIR and Raman spectra of ion irradiated and annealed 4H-SiC , 2007 .

[33]  U. Gerstmann,et al.  Silicon vacancy annealing and D1 luminescence in 6H-SiC , 2004 .

[34]  A. Henry,et al.  Pseudodonor nature of the DI defect in 4H-SiC , 2001 .

[35]  R. Freer.  The Physics and Chemistry of Carbides, Nitrides and Borides , 1990 .

[36]  V. Makarov.  LUMINESCENCE AND OPTICAL PROPERTIES OF SILICON CARBIDE IRRADIATED WITH FAST NEUTRONS. , 1972 .