Wet chemical etching survey of III-nitrides

Abstract Wet chemical etching of GaN, InN, AlN, InAlN and InGaN was investigated in various acid and base solutions at temperatures up to 75°C. Only KOH-based solutions were found to etch AlN and InAlN. No enchants were found for the other nitrides, emphasizing their extreme lack of chemical reactivity. The native oxide on most of the nitrides could be removed in potassium tetraborate at 75°C, or HCl H 2 O at 25°C.

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