Optimization of silicon bipolar transistors for high current gain at low temperatures

Bipolar transistors designed specifically for operation at liquid-nitrogen (LN/sub 2/) temperature are discussed. It is found that for high-gain LN/sub 2/ bipolar transistors, the emitter concentration should be around 5*10/sup 18/ cm/sup -3/. Compensating impurities in the base should be kept to minimum. Test bipolar transistors with polysilicon emitter contacts were fabricated using these criteria. The devices show very little current degradation between room temperature and 77 k. Polysilicon emitter contacts are also shown to be somewhat more effective at lower temperatures. >

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