Composition dependence of the in‐plane effective mass in lattice‐mismatched, strained Ga1−xInxAs/InP single quantum wells

The composition dependence of the in‐plane conduction band effective mass in strained 15‐nm‐thick lattice‐mismatched Ga1−xInxAs/InP single quantum wells was determined by conventional cyclotron and optically detected cyclotron resonance techniques. Our results are in agreement with a self‐consistent calculation taking into account effects due to nonparabolicity, confinement, strain, and finite two‐dimensional carrier densities.

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