VMR: VLSI-compatible metallic carbon nanotube removal for imperfection-immune cascaded multi-stage digital logic circuits using Carbon Nanotube FETs

Metallic carbon nanotubes (CNTs) create source-drain shorts in Carbon Nanotube Field Effect Transistors (CNFETs) resulting in excessive leakage (I<inf>on</inf>/I<inf>off</inf> ≪ 5) and highly degraded noise margins. A new technique, VLSI-compatible Metallic-CNT Removal (VMR), overcomes metallic CNT challenges by combining layout design with CNFET processing. VMR produces CNFET circuits with I<inf>on</inf>/I<inf>off</inf> in the range of 10<sup>3</sup>-10<sup>5</sup>, and overcomes the limitations of existing metallic-CNT removal techniques. VMR enables first experimental demonstration of complex cascaded CNFET logic circuits. Such logic circuits are immune to both mis-positioned and metallic CNTs.

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