Design theory of a surface field-effect transistor

Abstract The design theory of insulated gate, surface field-effect transistors is presented. It is shown that for similar dimensions the surface field-effect transistor has frequency response comparable to other field-effect transistors. It is found to be quite simple to trade capacitance and transconductance in the surface field-effect transistor. The static imput resistance of the surface field-effect transistor is just the leakage of the insulator, so that this device may be used in electrometers and similar equipment. In addition, the construction on the surface of a semiconductor crystal offers interesting possibilities as an element of an integrated circuit.