论文信息 - MOSFETs below 10 nm: quantum theory

MOSFETs below 10 nm: quantum theory

Abstract We have carried out numerical modeling of sub-10-nm dual-gate SOI MOSFETs with ultra-thin, intrinsic (undoped) channel connecting bulk, n + -doped source and drain, using self-consistent solution of the 1D Schrodinger equation and 2D Poisson equation for electrons within the channel. The results confirm that transistors with gate as short as 2 nm still can provide voltage gain above unity, though below ∼5 nm their characteristics are extremely sensitive to the device dimensions.

T. J. Walls | Konstantin K. Likharev | V. A Sverdlov

[1] T. J. Walls,et al. Nanoscale silicon MOSFETs: A theoretical study , 2003 .

[2] K. Likharev,et al. Effective boundary conditions for carriers in ultrathin SOI channels , 2003 .

[3] Yuan Taur,et al. Device scaling limits of Si MOSFETs and their application dependencies , 2001, Proc. IEEE.

[4] Mark S. Lundstrom. Elementary scattering theory of the Si MOSFET , 1997, IEEE Electron Device Letters.

[5] Y. Naveh,et al. Modeling of 10-nm-scale ballistic MOSFET's , 2000, IEEE Electron Device Letters.

[6] K. Natori. Ballistic metal-oxide-semiconductor field effect transistor , 1994 .