Improved device linearity of AlGaAs/InGaAs HFETs by a second mesa etching
暂无分享,去创建一个
Hsien-Chin Chiu | Yi-Jen Chan | Feng-Tso Chien | H. Chiu | Y. Chan | F. Chien | Shih-Cheng Yang | Shih-Cheng Yang
[1] Yo-Sheng Lin,et al. High-performance Ga/sub 0.51/In/sub 0.49/P/GaAs airbridge gate MISFET's grown by gas-source MBE , 1997 .
[2] Jose C. Pedro,et al. Large- and small-signal IMD behavior of microwave power amplifiers , 1999 .
[3] D. Pavlidis,et al. The influence of gate-feeder/mesa-edge contacting on sidegating effects in In/sub 0.52/Al/sub 0.48/ As/In/sub 0.53/Ga/sub 0.47/As heterostructure FET's , 1991, IEEE Electron Device Letters.
[4] S. Yamauchi,et al. Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs , 2000 .
[5] Yi-Jen Chan,et al. Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructures , 1996 .
[6] G. Haddad,et al. An HSPICE HBT model for InP-based single HBTs , 1996 .
[7] Roberto Menozzi,et al. Hot electron effects on Al/sub 0.25/Ga/sub 0.75/As/GaAs power HFET's under off-state and on-state electrical stress conditions , 2000 .
[8] K. Hur,et al. Airbridged-gate MESFETs fabricated by isotropic reactive ion etching , 1993 .