The nonlinear optical rectification and second harmonic generation in asymmetrical Gaussian potential quantum well: Effects of hydrostatic pressure, temperature and magnetic field
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Zhi-Hai Zhang | Xin Liu | Chenglin Liu | Lili Zou | J. Yuan
[1] Zhi-Hai Zhang,et al. Electric field effect on the second-order nonlinear optical properties in semiparabolic quantum wells , 2016 .
[2] C. Duque,et al. Exciton‐related optical properties in zinc‐blende GaN/InGaN quantum wells under hydrostatic pressure , 2015 .
[3] M. Karimi,et al. Second-order nonlinear optical properties in a strained InGaN/AlGaN quantum well under the intense laser field , 2015 .
[4] M. Karimi,et al. Intense laser field effects on the linear and nonlinear intersubband optical properties in a strained InGaN/GaN quantum well , 2014 .
[5] L. Sfaxi,et al. Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot , 2013 .
[6] Liangliang Lu,et al. Nonlinear optical rectification and the second-harmonic generation in semi-parabolic and semi-inverse squared quantum wells , 2012 .
[7] J. Zhu,et al. Intersubband absorption in strained AlxGa1−xN/GaN quantum wells with InyGa1−yN nanogroove layers , 2012 .
[8] S. Elagoz,et al. Hydrogenic impurity states in zinc-blende InxGa1−xN/GaN in cylindrical quantum well wires under hydrostatic pressure , 2011 .
[9] I. Karabulut,et al. Nonlinear optical rectification and optical absorption in GaAs-Ga1―xAlxAs asymmetric double quantum wells: Combined effects of applied electric and magnetic fields and hydrostatic pressure , 2011 .
[10] E. Niculescu,et al. Simultaneous effects of pressure and laser field on donors in GaAs/Ga1−xAlxAs quantum wells , 2009 .
[11] M. Buchanan,et al. NIR, MWIR and LWIR quantum well infrared photodetector using interband and intersubband transitions , 2007 .
[12] J. Majewski,et al. Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells , 2004 .
[13] A. Morales,et al. BINDING ENERGY FOR A SHALLOW DONOR IMPURITY IN GaAs–(Ga, Al)As QUANTUM WELLS UNDER HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD , 2002 .
[14] P. Voisin,et al. Normal-incidence intersubband absorption in AlGaSb quantum wells , 2002 .
[15] N. Ledentsov,et al. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers , 1996 .
[16] Yoshiaki Nakata,et al. New Optical Memory Structure Using Self-Assembled InAs Quantum Dots , 1995 .
[17] Stephen Y. Chou,et al. Single hole quantum dot transistors in silicon , 1995 .
[18] Guo,et al. Nonlinear optical rectification in parabolic quantum wells with an applied electric field. , 1993, Physical review. B, Condensed matter.
[19] M. Ohring,et al. Band offset determination in analog graded parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs , 1992 .
[20] Cho,et al. Giant, triply resonant, third-order nonlinear susceptibility chi 3 omega (3) in coupled quantum wells. , 1992, Physical review letters.
[21] S. A. Chalmers,et al. New Quantum Structures , 1991, Science.
[22] P. Dapkus. Metalorganic Chemical Vapor Deposition , 1982 .
[23] S. Hersee,et al. LOW-PRESSURE CHEMICAL VAPOR DEPOSITION , 1982 .
[24] M. Panish. Molecular-beam epitaxy , 1989, AT&T Technical Journal.
[25] D. E. Aspnes,et al. GaAs lower conduction-band minima: Ordering and properties , 1976 .
[26] H. Ehrenreich. Band Structure and Transport Properties of Some 3–5 Compounds , 1961 .