1D broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on one-dimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.

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