Extremely Low Resistance Non-Alloyed Ohmic Contacts to n-GaAs Using Compositionally Graded InxGa1-xAs Layers
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Silicon doping in lattice-mismatched InxGa1-xAs (x=0, 0.2, 0.35, 0.65, 1.0) films grown on GaAs by MBE is studied. The maximum carrier concentration for InxGa1-xAs is found to increase with the InAs mole fraction, x. Based on this result, the x dependence of the specific contact resistance, ρc, for non-alloyed ohmic contacts to n-GaAs using compositionally graded InxGa1-xAs layers is also investigated. It is found that ρc decreases with increasing x for x≤0.65, and an extremely low specific contact resistance of 5×10-8 Ω·cm2 is obtained with 1.5×1019 cm-3 doped n+-In0.65Ga0.35As.