论文信息 - High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction - 字舞流文

High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction

M. Rosmeulen | S. Ramesh | L. Nyns | G. V. D. Bosch | A. Arreghini | K. Banerjee | L. Breuil | J. Bastos | S. Rachidi