Grain Boundary effects in polycrystalline silicon solar cells

[1]  M. Böhm,et al.  A two-dimensional model for polycrystalline silicon solar cells , 1984 .

[2]  R. Srivastava,et al.  Mobility and carrier concentration in polycrystalline silicon , 1984 .

[3]  B. Sopori,et al.  Towards high efficiency polycrystalline silicon solar cells , 1984 .

[4]  N. Halder,et al.  Grain boundary effects in polycrystalline silicon solar cells. I - Solution of the three-dimensional diffusion equation by the Green's function method. II - Numerical calculation of the limiting parameters and maximum efficiency , 1983 .

[5]  S. Martinuzzi,et al.  Relative influence of grain boundaries and intragrain defects on the photocurrents obtained with bridgman polysilicon , 1983 .

[6]  S. Banerjee,et al.  Role of impurities in sintered CdS/Cu2S solar cells , 1983 .

[7]  S. Banerjee,et al.  Role of crystallites in the performance of polycrystalline solar cells , 1982 .

[8]  N. Halder,et al.  Grain boundary effects in polycrystalline silicon solar cells II: Numerical calculation of the limiting parameters and maximum efficiency , 1982 .

[9]  A. D. Vos,et al.  Determination of the maximum efficiency solar cell structure , 1981 .

[10]  R. Bube,et al.  Tunneling currents in the copper sulfide/cadmium sulfide heterojunction , 1980, IEEE Transactions on Electron Devices.

[11]  J. Fossum,et al.  Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells , 1980, IEEE Transactions on Electron Devices.

[12]  A. Lopez‐Otero,et al.  The electrical properties of CdTe films grown by hot wall epitaxy , 1979 .

[13]  F. G. Allen,et al.  Effect of grain boundaries in silicon on minority-carrier diffusion length and solar-cell efficiency , 1978 .

[14]  L. Kazmerski.  The effects of grain boundary and interface recombination on the performance of thin-film solar cells , 1978 .

[15]  M. Mukherjee,et al.  Two-dimensional analysis for CuxS-CdS solar cells with nonuniform skin region , 1978, IEEE Transactions on Electron Devices.

[16]  L. Fraas.  Basic grain‐boundary effects in polycrystalline heterostructure solar cells , 1978 .

[17]  E. Yang,et al.  Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination , 1977, IEEE Transactions on Electron Devices.

[18]  Philip M. Morse,et al.  Methods of Mathematical Physics , 1947, The Mathematical Gazette.

[19]  Nahar Singh,et al.  Novel non-destructive method of measurement of the dead layer thickness of A p+/n (or an n+/p) silicon solar cell , 1985 .

[20]  E. Yang,et al.  Physical basis of scattering potential at grain boundary of polycrystalline semiconductors , 1982 .

[21]  Amal K. Ghosh,et al.  Theory of the electrical and photovoltaic properties of polycrystalline silicon , 1980 .