High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillators

GaAs pin avalanche diodes have been fabricated for millimetre-wave frequencies using molecular beam epitaxy. The highest obtained pulsed output power was 15 W with 8% efficiency at 50.1 GHz. The maximum observed efficiency was 11.1% at 57.4 GHz and 8.3 W output power.