论文信息 - Fully-depleted SOI CMOS technology using WXN metal gate and HfSixOyNZ high-k dielectric - 字舞流文

Fully-depleted SOI CMOS technology using WXN metal gate and HfSixOyNZ high-k dielectric

O. Faynot | M. Orlowski | T. Skotnicki | D. Bensahel | C. Fenouillet-Béranger | S. Denorme | P. Perreau | S. Barnola | T. Salvetat | F. Leverd | S. Deleonibus | R. Gwoziecki | J. Coignus | F. Boeuf | L. Brevard | A. Vandooren | A. Cros | D. Fleury | C. Hobbs | F. Martin | D. Aimé | H. Mingam | R. Gassilloud | G. Chabanne | M. Aminpur | A. Zauner | M. Muller | V. Cosnier | S. Minoref | A. Wild