Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors

Motivated by recent experimental measurements (A. Leitenstorfer et al., 2000. Physical Review B 61(24): 16642–16652), this work presents the transient analysis of photogenerated electron-hole pairs in GaAs and InP pin diodes (S. M. Sze, 1981. Physics of Semiconductor Devices, 2nd edn., John Wiley) using a fullband particle-based simulator (M. Saraniti and S. Goodnick, 2000. IEEE Transactions on Electron Devices 47(10): 1909–1915). The fullband simulation tool is based on a particle-based technique that has been developed to reduce the computational time required for modeling charge transport phenomena in semiconductors. Excellent agreement is found between experiment and simulation of transient acceleration and velocity overshoot in GaAs and InP pin diodes due the femto-second optical excitation of carriers.

[1]  Alfred Leitenstorfer,et al.  Femtosecond high-field transport in compound semiconductors , 2000 .

[2]  D. A. Dunnett.  Classical Electrodynamics , 2020, Nature.

[3]  M. Brereton.  Classical Electrodynamics (2nd edn) , 1976 .

[4]  James R. Chelikowsky,et al.  Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors , 1976 .

[5]  R W Hockney,et al.  Computer Simulation Using Particles , 1966 .

[6]  G. S. Kino,et al.  Transport Properties of GaAs , 1968 .

[7]  Karl Hess,et al.  Theory of high-field transport of holes in GaAs and InP , 1984 .

[8]  P. N. Robson,et al.  Subthreshold velocity‐field characteristics for bulk and epitaxial InP , 1974 .

[9]  Peter A. Houston,et al.  Electron drift velocity in n-GaAs at high electric fields , 1977 .

[10]  S. Laux,et al.  Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. , 1988, Physical review. B, Condensed matter.

[11]  S. E. Laux,et al.  Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs , 1996, Journal of Technology Computer Aided Design TCAD.

[12]  V. Gruzinskis,et al.  An efficient Monte Carlo particle technique for two-dimensional transistor modelling , 1991 .

[13]  O. H. Nielsen,et al.  Lattice dynamics of zincblende structure compounds II. Shell model , 1984 .

[14]  M. Saraniti,et al.  Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors , 2000 .

[15]  S. Laux,et al.  Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply] , 1991 .

[16]  M. Fischetti.  Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport , 1991 .

[17]  P. M. Boers.  Measurements on dipole domains in indium phosphide , 1971 .