Electrothermal simulation and measurements of SOI smart power transistors for short pulses

this paper describes a method of simulation of electrothermal issues during the design phase of smart power SOI ICs using a network simulator only and with no other special tools. The results permit a qualified look into the inner volume of power devices especially the active transistor silicon level with respect to the thermal conditions and allow the closest common simulation of circuitry and heat sink. The focus is on the parameters of thermal rise and its detection by temperature diodes at short pulses and the optimization possibilities which have not been reported previously. The results will lead to the optimal design of temperature sensor diodes in SOI smart power designs.