Isothermal capacitance transient spectroscopy measurements on polycrystalline diamond/hydrogenated amorphous silicon heterojunctions

A deep level in boron‐doped polycrystalline diamond films located approximately 0.6 eV above the valence‐band edge has been found using isothermal capacitance transient spectroscopy (ICTS) measurements. p‐n heterojunctions between polycrystalline diamond and hydrogenated amorphous silicon were used in the study. The density and the hole‐capture cross section of the deep level traps were determined from the temperature dependence of ICTS spectra and found to be 2×1016 cm−3 and 1×10−17 cm2, respectively.

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