Flexible Complementary Oxide–Semiconductor-Based Circuits Employing n-Channel ZnO and p-Channel SnO Thin-Film Transistors

In this letter, we report flexible fully oxide-based complementary metal-oxide-semiconductor (CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc oxide (ZnO) and p-channel tin monoxide (SnO) thin-film transistors (TFTs). Inverted-staggered bottom-gated TFTs were fabricated by a low-temperature RF-sputtering technique. The static voltage gain of a flexible oxide-TFT-based CMOS inverter with a geometric aspect ratio of 5 is ~12 at a supplied voltage (VDD) of 12 V. An oscillation frequency of ~18.4 kHz is obtained from a five-stage flexible oxide-TFT-based CMOS voltage control ring oscillator at VDD of 12 V. Degradations of TFTs, inverters, and ring oscillators have been observed when a mechanical tensile strain is applied, whereas the influence of compressive strain is negligible.

[1]  Husam N. Alshareef,et al.  Record mobility in transparent p-type tin monoxide films and devices by phase engineering. , 2013, ACS nano.

[2]  I. Cheng,et al.  Complementary Oxide–Semiconductor-Based Circuits With n-Channel ZnO and p-Channel SnO Thin-Film Transistors , 2014, IEEE Electron Device Letters.

[3]  Jin Jang,et al.  High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV Exposure , 2011, IEEE Electron Device Letters.

[4]  T. Aoki,et al.  Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors , 2010 .

[5]  H. Kwon,et al.  Environment-Dependent Bias Stress Stability of P-Type SnO Thin-Film Transistors , 2015, IEEE Electron Device Letters.

[6]  Sung Kyu Park,et al.  ZnO Thin-Film Transistor Ring Oscillators with 31-ns Propagation Delay , 2008, IEEE Electron Device Letters.

[7]  Chung‐Chih Wu,et al.  Preparation of p-type SnO thin films and transistors by sputtering with robust Sn/SnO2 mixed target in hydrogen-containing atmosphere , 2015 .

[8]  Bernard Kippelen,et al.  Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors , 2010 .

[9]  A. Suresh,et al.  Fast All-Transparent Integrated Circuits Based on Indium Gallium Zinc Oxide Thin-Film Transistors , 2010, IEEE Electron Device Letters.

[10]  Dhananjay,et al.  Complementary inverter circuits based on p-SnO2 and n-In2O3 thin film transistors , 2008 .

[11]  Hideo Hosono,et al.  Ambipolar Oxide Thin‐Film Transistor , 2011, Advanced materials.

[12]  W. Lu,et al.  Ambipolar inverters using SnO thin-film transistors with balanced electron and hole mobilities , 2012 .

[13]  Hideo Hosono,et al.  p-channel thin-film transistor using p-type oxide semiconductor, SnO , 2008 .

[14]  Min Hyuk Choi,et al.  Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors , 2011, IEEE Electron Device Letters.

[15]  Pedro Barquinha,et al.  Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing , 2010 .

[16]  Bernard Kippelen,et al.  Metal-oxide complementary inverters with a vertical geometry fabricated on flexible substrates , 2011 .

[17]  Jin Jang,et al.  Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits , 2011, IEEE Electron Device Letters.

[18]  Hideo Hosono,et al.  Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits , 2010 .

[19]  I. Cheng,et al.  Gate-Bias Stress Stability of P-Type SnO Thin-Film Transistors Fabricated by RF-Sputtering , 2014, IEEE Electron Device Letters.

[20]  Matthew T. Cole,et al.  Flexible Electronics: The Next Ubiquitous Platform , 2012, Proceedings of the IEEE.

[21]  P. K. Nayak,et al.  Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer , 2015, Scientific Reports.

[22]  P. K. Nayak,et al.  Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer , 2014, Scientific Reports.