Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping

Abstract AlGaN/GaN High Electron Mobility Transistors (HEMTs) with gate lengths of 0.14–0.17 μm were electrically stressed under on-state (VG = 0 V), off-state (VG = −5 V) and typical operating conditions (VG = −2 V) and subsequently illuminated with below band-gap light to monitor changes in drain current corresponding to the changes in trapping and de-trapping of carriers within the band-gap. The changes in drain current are indicators of a change in trap density as a result of electrical stressing, since the energy from a specific wavelength of light fills traps whose activation energies are less than or equal to that of the light source. Changes in trap densities were minimal after both off-state and on-state stressing but significant trap creation in the range EC-0.4–0.6 eV were observed in HEMTs exhibiting gradual degradation during stressing. Energy levels corresponding to these values in the literature have been suggested to correlate with GaN and NGa substitutional defects, as well as GaI interstitials.

[1]  C. Q. Chen,et al.  Luminescence from stacking faults in gallium nitride , 2005 .

[2]  G. Verzellesi,et al.  Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives , 2008, IEEE Transactions on Device and Materials Reliability.

[3]  D. Pavlidis,et al.  Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[4]  Ion Tiginyanu,et al.  Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography , 2006 .

[5]  Michael Kneissl,et al.  Structural and optical properties of nonpolar GaN thin films , 2008 .

[6]  S. Yokokawa,et al.  High-power and high-efficiency AlGaN/GaN HEMT operated at 50 V drain bias voltage , 2003, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.

[7]  Yu Cao,et al.  Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors , 2011 .

[8]  U. Chowdhury,et al.  X-Band GaN FET reliability , 2008, 2008 IEEE International Reliability Physics Symposium.

[9]  J. D. del Alamo,et al.  Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors , 2008, IEEE Electron Device Letters.

[10]  Paul Saunier,et al.  RF reliability performance of AlGaN/GaN HEMTs on Si substrate at 10 GHz , 2004 .

[11]  U. Mishra,et al.  AlGaN/GaN HEMTs-an overview of device operation and applications , 2002, Proc. IEEE.

[12]  Stephen J. Pearton,et al.  Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation , 2011 .

[13]  Fan Ren,et al.  Wide energy bandgap electronic devices , 2003 .

[14]  Christian Dua,et al.  A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications , 2005, Microelectron. Reliab..

[15]  James S. Speck,et al.  Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope , 2003 .

[16]  Chris G. Van de Walle,et al.  Diffusivity of native defects in GaN , 2004 .

[17]  J.A. del Alamo,et al.  A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors , 2008, IEEE Electron Device Letters.

[18]  Umesh K. Mishra,et al.  GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.

[19]  M. Wojtowicz,et al.  Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[20]  G. Meneghesso,et al.  Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors , 2008, IEEE Transactions on Device and Materials Reliability.

[21]  Stephen J. Pearton,et al.  Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors , 2011 .

[22]  Paul Saunier,et al.  Effects of AlGaN/GaN HEMT structure on RF reliability , 2005 .

[23]  H. Morkoç,et al.  Luminescence properties of defects in GaN , 2005 .

[24]  Tangsheng Chen,et al.  Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates , 2005 .

[25]  P. Saunier,et al.  Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates , 2004 .

[26]  Sefa Demirtas,et al.  High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate , 2010, Microelectron. Reliab..

[27]  S. Binari,et al.  Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors , 2003 .

[28]  Gaudenzio Meneghesso,et al.  RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements , 2009, 2009 European Microwave Integrated Circuits Conference (EuMIC).

[29]  Boleslaw Lucznik,et al.  Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching , 2008 .

[30]  Fadhel M. Ghannouchi,et al.  Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design , 2010 .

[31]  H. Blanck,et al.  GaN technologies and developments: Status and trends , 2010, 2010 International Conference on Microwave and Millimeter Wave Technology.

[32]  T. Kazior,et al.  Trapping effects in GaN and SiC microwave FETs , 2002, Proc. IEEE.

[33]  Daniel S. Green,et al.  Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability , 2004 .

[34]  Jungwoo Joh,et al.  A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors , 2011, IEEE Transactions on Electron Devices.

[35]  Van de Walle CG,et al.  Atomic geometry and electronic structure of native defects in GaN. , 1994, Physical review. B, Condensed matter.

[36]  Jinhyung Kim,et al.  Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors , 2012, Microelectron. Reliab..

[37]  Jungwoo Joh,et al.  GaN HEMT reliability , 2009, Microelectron. Reliab..