Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

One diode-one resistor (1D1R) memory is an effective architecture to suppress the crosstalk interference, realizing the crossbar network integration of resistive random access memory (RRAM). Herein, we designed a p+-Si/n-ZnO heterostructure with 1D1R function. Compared with the conventional multilayer 1D1R devices, the structure and fabrication technique can be largely simplified. The real-time imaging of formation/rupture process of conductive filament (CF) process demonstrated the RS mechanism by in-situ transmission electron microscopy (TEM). Meanwhile, we observed that the formed CF is only confined to the outside of depletion region of Si/ZnO pn junction, and the formation of CF does not degrade the diode performance, which allows the coexistence of RS and rectifying behaviors, revealing the 1D1R switching model. Furthermore, it has been confirmed that the CF is consisting of the oxygen vacancy by in-situ TEM characterization.

[1]  I. Yoo,et al.  2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications , 2007, 2007 IEEE International Electron Devices Meeting.

[2]  X. Bai,et al.  In-situ TEM study of the dynamic behavior of the graphene-metal interface evolution under Joule heating , 2016 .

[3]  Wei Lu,et al.  Short-term Memory to Long-term Memory Transition in a Nanoscale Memristor , 2022 .

[4]  Chun-Wei Huang,et al.  Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament , 2015, Advanced materials.

[5]  Zhong Lin Wang,et al.  Electron energy-loss spectroscopy study of ZnO nanobelts. , 2005, Journal of electron microscopy.

[6]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[7]  Lih-Juann Chen,et al.  Dynamic evolution of conducting nanofilament in resistive switching memories. , 2013, Nano letters.

[8]  X. Bai,et al.  Bipolar Electrochemical Mechanism for Mass Transfer in Nanoionic Resistive Memories , 2014, Advanced materials.

[9]  Frederick T. Chen,et al.  Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications , 2008 .

[10]  Hai Xu,et al.  Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments , 2014 .

[11]  W. Lu,et al.  High-density Crossbar Arrays Based on a Si Memristive System , 2008 .

[12]  S. Ferrari,et al.  Author contributions , 2021 .

[13]  Yichun Liu,et al.  Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO 2 /Pt memory device , 2016 .

[14]  X. Y. Liu,et al.  Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array , 2012, 2012 IEEE Silicon Nanoelectronics Workshop (SNW).

[15]  J. Chaboy,et al.  O K-Edge X-ray Absorption Spectroscopy in Al-Doped ZnO Materials: Structural vs Electronic Effects , 2014 .

[16]  Tuo-Hung Hou,et al.  Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode , 2010 .

[17]  Fei Zhou,et al.  Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide , 2016, Scientific Reports.

[18]  Dapeng Yu,et al.  Fabrication and microstructure analysis on zinc oxide nanotubes , 2003 .

[19]  Andrew G. Glen,et al.  APPL , 2001 .

[20]  D. Stewart,et al.  The missing memristor found , 2008, Nature.

[21]  B. Gao,et al.  A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations , 2013, IEEE Transactions on Electron Devices.

[22]  K. Lim,et al.  A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect , 2011 .

[23]  L. D. Finkelstein,et al.  Effect of Co and O defects on the magnetism in Co-doped ZnO: Experiment and theory , 2007 .

[24]  Liudi Jiang,et al.  Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices , 2014 .

[25]  X. Bai,et al.  Strong Coupling between ZnO Excitons and Localized Surface Plasmons of Silver Nanoparticles Studied by STEM-EELS. , 2015, Nano letters.

[26]  J. Bell,et al.  Experiment and Theory , 1968 .

[27]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[28]  J. Deen,et al.  Nanoscale memory devices , 2010, Nanotechnology.

[29]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[30]  Kinam Kim,et al.  In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure , 2013, Nature Communications.

[31]  Cheol Seong Hwang,et al.  (In,Sn)2O3∕TiO2∕Pt Schottky-type diode switch for the TiO2 resistive switching memory array , 2008 .

[32]  Y. Liu,et al.  Localized resistive switching in a ZnS–Ag/ZnS double-layer memory , 2014 .

[33]  X. T. Zhang,et al.  Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters. , 2013, Nanoscale.

[34]  Qiangfei Xia,et al.  Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. , 2010, Nano letters.