A method for the detection and quantitative estimation of low shunt resistances via the dark spectral response measurement of multijunction photovoltaic cells: Theory and results

This paper shows how to experimentally detect a low shunt resistance in a component cell of a multijunction photovoltaic (PV) device and theoretically estimate its value, by means of measurements of the dark spectral response (DRS). The theoretical approach to DSR measurements on 2-junction devices is revised, starting from the simplest approach where the device is modelled by a series of two non-ideal diodes. The quantitative modelling results are compared with the DSR measurement of an a-Si:H/uc-Si thin-film mini-module. Examples of the same theoretical analysis on 3-junction devices are also given, together with experimental results for comparison.