A Low-Power Ultrawideband CMOS Power Detector With an Embedded Amplifier

A self-biased low-power CMOS power detector (PD) is proposed and demonstrated in this paper. The detector utilizes the nonlinear characteristics of short-channel MOS devices operating in either a saturation or subthreshold regime to generate a dc current that is proportional to the input RF signal power. The operating regimes of MOS devices depend on input RF power levels. A quasi-T-coil matching network providing 50- matching from 0.5 to 20 GHz is designed and analyzed. An embedded amplifier is added to enhance the sensitivity of the PD when the input power level is low. The circuit that is implemented in a 0.13- CMOS process occupies an active area of 0.085 . In the matched frequency range, the measured input dynamic range is 47 dB with an overall sensitivity of 26.8 mV/dB. The output dc voltage response is nearly frequency-independent in the linear operating range, varying by less than 1.9 dB for a given input RF power level, as the RF frequency is swept across the operating frequency range. With a standard 1.2-V supply, the static power consumption is about 0.1 mW, which decreases to with a 0.5-V supply, while the operating frequency remains unchanged.

[1]  Thomas H. Lee,et al.  The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .

[2]  Yanyang Zhao,et al.  Multi(Six)-port impulse radio for ultra-wideband , 2006, IEEE Transactions on Microwave Theory and Techniques.

[3]  G.F. Engen.  An Improved Circuit for Implementing the Six-Port Technique of Microwave Measurements , 1977, 1977 IEEE MTT-S International Microwave Symposium Digest.

[4]  R. Sorrentino,et al.  A novel technique for complex permittivity measurement based on a planar four port device , 2005, 2005 European Microwave Conference.

[5]  G. Engen.  The Six-Port Reflectometer: An Alternative Network Analyzer , 1977 .

[6]  Tao Zhang,et al.  A translinear RMS detector for embedded test of RF ICs , 2005, IEEE Transactions on Instrumentation and Measurement.

[7]  Hen-Wai Tsao,et al.  A 110-MHz 84-dB CMOS programmable gain amplifier with integrated RSSI function , 2005, IEEE Journal of Solid-State Circuits.

[8]  Hanqiao Zhang,et al.  A novel six-port circuit based on four quadrature hybrids , 2010 .

[9]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .

[10]  Hanqiao Zhang,et al.  A new method for high-frequency characterization of patterned ferromagnetic thin films , 2009 .

[11]  Mona E. Zaghloul,et al.  CMOS foundry implementation of Schottky diodes for RF detection , 1996 .

[12]  Yijun Zhou,et al.  A Low-Power Ultra-Wideband CMOS True RMS Power Detector , 2008, IEEE Transactions on Microwave Theory and Techniques.

[13]  J.W. Haslett,et al.  A Wideband Power Detection System Optimized for the UWB Spectrum , 2009, IEEE Journal of Solid-State Circuits.

[14]  M. Fanciulli,et al.  CMOS fully compatible microwave detector based on MOSFET operating in resistive regime , 2005, IEEE Microwave and Wireless Components Letters.

[15]  R. Meyer.  Low-power monolithic RF peak detector analysis , 1995, IEEE J. Solid State Circuits.

[16]  Shuyun Zhang,et al.  A novel power-amplifier module for quad-band wireless handset applications , 2003, RFIC 2003.

[17]  Theerachet Soorapanth,et al.  RF Linearity of Short-Channel MOSFETs , 1997 .

[18]  Íñigo Molina-Fernández,et al.  Novel modulation scheme and six-port based RAKE receiver for DS-UWB , 2009, IEEE Transactions on Wireless Communications.

[19]  Roberto Sorrentino,et al.  A novel technique for complex permittivity measurement based on a planar four-port device , 2006 .

[20]  B. Razavi,et al.  Broadband ESD protection circuits in CMOS technology , 2003, 2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..