论文信息 - A distributed network model of SOI MOSFET for microwave frequency applications

A distributed network model of SOI MOSFET for microwave frequency applications

In this paper, a small signal model of SOI MOSFET operating in the inversion region is developed, taking into account the distributed nature of the gate structure. Because the width of the device is large compared to its length, it is essential to consider it as a transmission line. The y and s parameters have been evaluated to obtain various gains, which otherwise cannot be predicted using lumped analysis. This model is useful in predicting the device's high-frequency performance. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 26–31, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10814

Subhasis Haldar | R. S. Gupta | Mridula Gupta | Nirupama Kapoor

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